Power Matters™

RF/Microwave GaN on SiC Power Devices, Pallets and Modules

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General Purpose SMT to 3.5 GHz and General Purpose Drivers to L-Band 

  • Applications from 50 MHz to 3.5 GHz
  • 15W to 250W Pulsed & CW Output Power
  • Compact SMT CuPack and QFN packages
  • Drivers in ceramic earless or boltdown flanged packages and small footprint 50Ω pallets

Featured GaN on SiC Power Devices, Pallets & Modules

  • 1214GN-50EP L-Band Radar E-Series Driver Pallet
  • 1011GN-1200V L-Band Avionics Output Stage
  • 2731GN-270V S-Band Pulsed Primary Radar Driver or Output Stage
  • 1214GN-700V L-Band Pulsed Primary Radar Output Stage
  • 0510GN-25-QP General Purpose Transistor
  • DC35GN-15-Q4 Wideband DC-3.5 GHz General Purpose Driver

L-Band Avionics Output Stage

  • Avionics applications from  960 MHz to 1215 MHz
  • 300W to 1.2 kW Pulsed Output Power
  • Available in Chip and QFN packages


L-Band Pulsed Primary Radar Output Stage

  • Ideal for Radar Applications from 1.2 to 1.6 Ghz 
  • 18-0W to 700W Pulsed Output Power
  • Available in ceramic flanged boltdown packages

 

 

S-Band Pulsed Primary Radar Output Stage

  • Ideal for RADAR applications from 2.7 GHz to 3.5 GHz
  • 120W to 500W Pulsed Output Power
  • Available in ceramic flanged boltdown packages

C-Band Radar and Communications

  • Radar & Communications applications from 3.9 GHz to 5.9 GHz
  • 120W to 500W output power
  • Available in ceramic flanged boltdown package

 

 

Microsemi's offers a broad line of GaN on SiC transistors for RF Power applications. 

GaN RF Power Transistors Features and Benefits

  • GaN High breakdown voltage provides Vdd to breakdown headroom
  • GaN High junction temperatures provides high MTTF
  • GaN on SiC HEMT provides Class AB deriving wide Pout dynamic range and good linearity
  • GaN on SiC provides the highest power density
  • GaN on SiC provides the smallest footprint and reduced weight
  • GaN on SiC provides the highest power support and best efficiency