Power Matters™


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Silicon Carbide (SiC) MOSFETs offer superior dynamic and thermal performance over conventional Silicon (Si) power MOSFETs.


Next Generation SiC MOSFET Features

  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gage resistance (ESR)
  • Stable operation at high junction temperature at 175 degrees Celsius
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • AEC-Q101 qualification

Next Generation SiC MOSFET Benefits

  • High efficiency with lower switching losses
  • Simple to drive and easy to parallel
  • Improved thermal capabilities to 175 degrees Celsius junction temperature
  • Eliminates need for external freewheeling diode
  • Lower system cost (smaller magnetics/heat sinks, fewer components, reduced system size)
  • Ruggedness with automotive qualified solutions

Next Generation SiC MOSFET Applications

  • PV inverter, converter, and industrial motor drives
  • Smart grid transmission and distribution
  • Induction heating and welding
  • Hybrid electric vehicle (HEV)/electric vehicle (EV) powertrain and charging
  • Power supply and distribution