Power Matters™

SiC Schottky Barrier Diodes

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Silicone Carbide (SiC) Schottky Barrier Diodes (SBD) offer superior dynamic and thermal performance over conventional Silicon power diodes.

SiC Diode Features

  • Ultra-fast recovery times
  • Soft recovery characteristics
  • Low forward voltage
  • Low leakage current
  • Avalanche energy rated
  • Essentially zero forward and reverse recovery = reduced switch and diode switching losses
  • AEC-Q101 qualified with usable 175 degrees Celsius junction temperature

SiC Diode Benefits

  • Improved system efficiency at higher switching frequency
  • Low switching losses
  • Low noise (EMI) switching
  • Higher reliability systems with increased power density
  • Lower System Cost (smaller magnetic/heat sinks, fewer components, reduced system size)
  • Commercial and Automotive qualified solutions

SiC Diode Applications

  • Power Factor correction (PFC)
  • Anti-parallel diode
  • Freewheeling diode
    • Switch mode power supply
    • Inverters/converters
  • Snubber/clamp diode