Power Matters™

Silicon & GaAs GUNN Diodes, Sensors and Sources

Под заказ Заказать Узнать цену

Microsemi's GaAs GUNN Diodes are fabricated from epitaxial layers grown at Microsemi by the Vapor Phase Epitaxy technique. The layers are processed using proprietary techniques resulting in ultra-low phase noise and 1/f noise.

Anode Heatsink

  • 9.5-25Ghz
  • Pulsed and CW designs to 30mW
  • High reliability, ultra low phase noise, and low 1/f noise
  • Transmitters and receivers, beacons, radars, radiometers, and instrumentation
  • Motion detectors and automotive collision avoidance
  • CW Epi-Up Gunn Diodes
  • Pulsed Epi-Up Gunn Diodes
 

Cathode Heatsink