Power Matters™

Silicon Carbide (SiC)

Silicon Carbide (SiC) semiconductors are an innovative new option for power electronic designers looking to improve system efficiency, smaller form factor and higher operating temperature in products covering industrial, medical, mil-aerospace, aviation, and communication market segments. The company's next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high repetitive unclamped inductive switching (UIS) capability, and its SiC MOSFETs maintain high UIS capability at approximately 10-15 Joule per square centimeter (J/cm2) and robust short-circuit protection at 3-5 microseconds. The company’s SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance and thermal capacitance ratings at low reverse current for lower switching loss. In addition, its SiC MOSFET and SiC SBD die can be paired together for use in modules.

Extremely low Switching losses

  • Zero reverse recovery charge improves system efficiency

High Power Density

  • Smaller footprint device reduces system size and weight

High thermal conductivity

  • 2.5x more thermally conductive than silicon

Reduced Sink Requirements

  • Results in lower cost and smaller size

High-Temperature Operation

  • Increased power density and improved reliability

New 30 kW Three-Phase Vienna PFC Reference Design

User-friendly reference designs enable power engineers to kick-start SiC designs using the company's next-generation SiC SBDs and SiC MOSFETs. In addition to various discrete and power gate drive reference designs and developed in collaboration with North Carolina State University (NCSU), its new scalable 30-kilowatt (kW), three-phase Vienna power factor correction (PFC) topology reference design is ideally suited for fast electric vehicle (EV) charging and other high power automotive and industrial applications, providing customers with more efficient switching as well as high avalanche/repetitive unclamped inductive switching (UIS) and high short-circuit withstand ratings when utilizing the company’s robust SiC MOSFETs and SiC diodes.

 

Silicon Carbide (SiC) Semiconductor | Microsemi
 

Silicon Carbide (SiC) Semiconductor

 

Silicon Carbide (SiC) semiconductors are an innovative new option for power electronic designers looking to improve system efficiency, smaller form factor and higher operating temperature in products covering industrial, medical, mil-aerospace, aviation, and communication market segments. The company's next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high repetitive unclamped inductive switching (UIS) capability, and its SiC MOSFETs maintain high UIS capability at approximately 10-15 Joule per square centimeter (J/cm2) and robust short-circuit protection at 3-5 microseconds. The company’s SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance and thermal capacitance ratings at low reverse current for lower switching loss. In addition, its SiC MOSFET and SiC SBD die can be paired together for use in modules.

Extremely low Switching losses

  • Zero reverse recovery charge improves system efficiency

High Power Density

  • Smaller footprint device reduces system size and weight

High thermal conductivity

  • 2.5x more thermally conductive than silicon

Reduced Sink Requirements

  • Results in lower cost and smaller size

High-Temperature Operation

  • Increased power density and improved reliability

New 30 kW Three-Phase Vienna PFC Reference Design

User-friendly reference designs enable power engineers to kick-start SiC designs using the company's next-generation SiC SBDs and SiC MOSFETs. In addition to various discrete and power gate drive reference designs and developed in collaboration with North Carolina State University (NCSU), its new scalable 30-kilowatt (kW), three-phase Vienna power factor correction (PFC) topology reference design is ideally suited for fast electric vehicle (EV) charging and other high power automotive and industrial applications, providing customers with more efficient switching as well as high avalanche/repetitive unclamped inductive switching (UIS) and high short-circuit withstand ratings when utilizing the company’s robust SiC MOSFETs and SiC diodes.

 


New Low Inductance SP6LI SiC Power Modules

  • High current, high switching frequency, high-efficiency SiC topologies
  • Extremely low parasitic loop stray inductance at 2.9 nanohenry
  • Easy to parallel module phase legs and ability to interconnect 3 modules
  • Full screw interconnection terminals for added reliability from vibrations
  • Standard SP6 package 62 mm x 108 mm footprint

SP6LI power modules can be used in switch mode power supplies and motor control in a variety of industrial, automotive, medical, aerospace and defense applications. Examples include electric vehicle/hybrid electric vehicle (EV/HEV) powertrain and kinetic energy recovery systems (KERS); aircraft actuation systems; power generation systems; switched mode power supplies for applications including induction heating, medical power supplies and electrification of trains; photovoltaic (PV)/solar/wind converters and uninterrupted power supply (UPS). SP6LI product family features five standard modules offering phase leg topology ranking from 1200 volts (V), 210 amperes (A) to 586 A at a case temperature (Tc) of 80 degrees Celsius to 1700 V, 207 A at Tc of 80 degrees Celsius. Offering higher power density and a compact form factor, the new package enables lower quantity of modules in parallel to achieve complete systems, helping customers to further downsize their equipment.